Efficient Power Conversion has launched a 40V, 3mΩ eGaN FET for space-constrained form factors including USB-C chargers and ultra-thin point-of-load (POL) converters.
Other low-voltage applications benefiting from the fast-switching speeds and high efficiency of the EPC2055 include LED lighting, 12 V – 24 V input motor drivers, and lidar systems for robotics, drones, and autonomous cars.
“The EPC2055 is a very good example of the rapid evolution of GaN FET technology. This 40 volt device offers both smaller size and reduced parasitics compared with previous-generation 40 V GaN FETs and at lower cost; thus, offering designers both improved performance and cost savings,” said Alex Lidow, EPC’s CEO and co-founder.
The EPC90132 development board is a 40 V maximum device voltage, 25 A maximum output current, half bridge with onboard gate drives, featuring the EPC2055 eGaN FETs. The 2” x 2” (50.8 mm x 50.8 mm) board is designed for optimal switching performance and contains all critical components for easy evaluation of the EPC2055. Both the EPC2055 and EPC90132 are available to order from Digi-Key.
- 300W BIDIRECTIONAL GaN 1/16TH BRICK FOR DATA CENTRES
- EPC, MICROCHIP TEAM ON THIN 48V GaN DC-DC CONVERTER DESIGNS
- 200V EGAN FET DOUBLES PERFORMANCE
- EPC TAKES ON SILICON OVER GaN RELIABILITY
- FIRST MONOLITHIC GaN FET AND DRIVER CHIP
Other articles on eeNews Power
- Single device monitors up to 500 km of high voltage lines
- Britishvolt moves battery gigafactory plan to Northumberland
- ST, Schneider team on SiC and GaN