40V GaN FET for USB-C chargers

December 22, 2020 //By Nick Flaherty
40V GaN FET for USB-C chargers
The 40 V, 3 milliohm EPC2055 eGaN FET is aimed at USB-C chargers and ultra-thin point-of-load (POL) converters.

Efficient Power Conversion has launched a 40V, 3mΩ eGaN FET for space-constrained form factors including USB-C chargers and ultra-thin point-of-load (POL) converters.

Other low-voltage applications benefiting from the fast-switching speeds and high efficiency of the EPC2055 include LED lighting, 12 V – 24 V input motor drivers, and lidar systems for robotics, drones, and autonomous cars.

“The EPC2055 is a very good example of the rapid evolution of GaN FET technology. This 40 volt device offers both smaller size and reduced parasitics compared with previous-generation 40 V GaN FETs and at lower cost; thus, offering designers both improved performance and cost savings,” said Alex Lidow, EPC’s CEO and co-founder.

The EPC90132 development board is a 40 V maximum device voltage, 25 A maximum output current, half bridge with onboard gate drives, featuring the EPC2055 eGaN FETs. The 2” x 2” (50.8 mm x 50.8 mm) board is designed for optimal switching performance and contains all critical components for easy evaluation of the EPC2055.   Both the EPC2055 and EPC90132 are available to order from Digi-Key.


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