Vishay Intertechnology has launched a 30V p-channel MOSFET with an on-resistance of 1.7 mΩ at 10 V.
The Vishay Siliconix TrenchFET Gen IV SiRA99DP is packaged in a thermally-enhanced SO-8 PowerPAK measuring 6.15 mm by 5.15 mm to increase power density.
The on-resistance of the MOSFET is 43 percent lower than other similar devices to reduce voltage drops and minimize conduction power losses for higher power density. Combining this low RDS(ON) with an ultra low gate charge of 84 nC, the SiRA99DP delivers best in class gate charge times on-resistance, a critical figure of merit (FOM) for MOSFETs used in switching applications, of 185 mΩ*nC
The MOSFET is aimed at circuits with a 12 V input, such as adapter, battery, and general purpose power switches; reverse polarity battery protection; OR-ing functionality; and motor drive control in telecom equipment, servers, and industrial PCs and robots. The increased power density saves PCB space in these applications by reducing the number of components needed in parallel — in other words, by delivering more current per individual device. In addition, as a p-channel MOSFET, the device doesn't require a charge pump to provide the positive gate bias needed by its n-channel counterparts.
The MOSFET is 100 % RG- and UIS-tested, RoHS-compliant, and halogen-free.
Samples and production quantities of the SiRA99DP are available now, with lead times of 12 weeks subject to market conditions.
Other MOSFET articles
- 60V DEVICE IS DESIGNED FOR STANDARD GATE DRIVERS
- REPLACING DIODES TO BOOST GENERATOR EFFICIENCY
- FIRST P-CHANNEL FAMILY IN LFPAK56 PACKAGE
- FOOTPRINT CUT BY A THIRD WITH LOW RDS(ON)
Other articles on eeNews Power