300W bidirectional GaN 1/16th brick for data centres

December 16, 2020 //By Nick Flaherty
300W bidirectional GaN 1/16th brick for data centres
The EPC9151 GaN power module from EPC achieves over 95 percent efficiency in a 300W, 48V DC-DC converter module

EPC has launched a 300 W bidirectional DC-DC converter in the very small 16th brick format which measures 33 mm x 22.9 mm (1.3 x 0.9 in) based on its gallium nitride GaN chips. The voltage regulator module is aimed at data centres and high performance computing systems.

The EPC9151 power module features Microchip’s dsPIC33CK digital signal controller (DSC) with the EPC2152 ePower Stage to achieve greater than 95% efficiency in a 300 W 48 V to/from 12 V converter design. Additional phases can be added to this scalable 2-phase design to further increase power.

Brick DC-DC converters are widely used to convert a nominal 48 V to (or from) a nominal 12 V distribution bus. The integration of the half bridge and gate drivers, resulting in the EPC2152 single chip solution employed in the EPC9151 module to simplify layout, minimize area, and reduce cost for these applications.

“eGaN FETs and integrated circuits provide the fast switching, small size, and low cost needed to meet the stringent power density requirements of leading-edge computing applications,” said Alex Lidow, CEO of EPC. “The EPC9151 is an ideal example of the capabilities of the integrated power stage, EPC2152, to increase the power density and reduce system costs for the 48 V power conversion requirement of these applications.”

The EPC9151 demonstration board is priced $414.00 each and is available for immediate delivery from Digi-Key.

www.epc-co.com

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