Infineon Technologies has launched a 24V dual-channel low side IGBT and MOSFET gate driver with an integrated thermal pad for power supplies and motor drives.
The EiceDRIVER 2ED24427N01F non-inverting gate driver can be operated with high switching frequencies as well as highest peak output currents and offers an enable function. The gate driver is suitable for applications with higher switching frequencies such as power factor correction and synchronous rectification, as well as a transformer driver or a buffer driver for parallel MOSFET applications or high-current IGBT modules such as EasyPACK and EconoPACK.
The EiceDRIVER 2ED24427N01F provides a symmetrical output stage with 10 A source and sink drive capability with integrated under-voltage lockout (UVLO) protection and logic level enable control. The gate driver is available in a DSO-8 package with a thermally efficient and exposed power pad. With 55 ns propagation delays and 450 mΩ (max) source and sink ON resistance per channel, the driver enables high switching frequencies with reduced switching losses of the power transistors.
Proprietary latch immune CMOS technologies enable ruggedized monolithic construction and the logic input is compatible with standard CMOS or LSTTL output. The output driver features a current buffer stage with a high pulse current buffer stage designed for minimum driver cross-conduction. Propagation delays between two channels are matched and the internal VCC circuitry in the gate driver provides under voltage lockout protection that holds output low until VCC supply voltage is within operating range.
The integrated thermal pad offers very low thermal resistance to enable reliable operation at lower temperatures under high current conditions or at higher switching frequencies. The 2ED24427N01F gate driver is rated for industrial temperature grade operation.
The EiceDRIVER 2ED24427N01F can be ordered now in an industry-standard DSO-8 (SOIC-8) package with a thermal pad and 2 kV HBM ESD ratings.