1700V SiC MOSFET in 7pin surface mount package

May 29, 2020 // By Nick Flaherty
The latest 1700V CoolSiC MOSFETs from Infineon Technologies are optimised for PWM controllers in single ended flyback designs and so do not need a driver.
The latest 1700V SiC MOSFETs from Infineon Technologies are optimised for PWM controllers in single ended flyback designs and so do not need a driver.

Infineon Technologies has launched a silicon carbide 1700V SiC MOSFET in a 7pin surface mount seven lead package for high voltage auxiliary power supplies.

The 1700V CoolSiC MOSFET targets auxiliary power supplies in three-phase conversion systems such as motor drives, renewables, charging infrastructure and HVDC systems which usually operate below 100 W. In these cases, designers very often prefer a single-ended flyback topology. The higher voltage parts enable this topology to be used for DC-link connected auxiliary circuits up to 1000 V DC input voltage.

The SiC MOSFETs are optimized for flyback topologies with +12 V / 0 V gate-source voltage compatible with common PWM controllers so that they do not need a gate driver IC and can be operated directly by the flyback controller. This allows high efficiency and high reliability auxiliary converters to be designed using a single-ended flyback converter in three-phase power conversion systems, reducing the system footprint and bill-of-materials.

“Trench technology of a CoolSiC MOSFET balancing performance and reliability in operation is now available for 1700V,” said Dr. Peter Friedrichs, Senior Director SiC at the Industrial Power Control Division of Infineon. “It combines the best of SiC properties: low losses with small footprint, in a high voltage SMD package. This helps our customers to significantly reduce the complexity in their auxiliary power supplies”.

The 1700 V blocking voltage eliminates design concerns regarding overvoltage margin and reliability of power supplies. The CoolSiC trench technology features lowest device capacitances and gate charges for transistors of this voltage class. The result is a power loss reduction by more than 50 percent and 2.5 percent higher efficiency compared to state-of-the art 1500V silicon MOSFETs. The efficiency is 0.6 percent higher, compared to other 1700 SiC MOSFETs. The low losses enable compact SMD assembly with natural convection cooling without the need for a heatsink.

The 1700V SiC trench MOSFETs have on-resistance of 450 mΩ, 650 mΩ or 1000 mΩ. The new 7 lead D²PAK SMD package offers extended creepage and clearance

Vous êtes certain ?

Si vous désactivez les cookies, vous ne pouvez plus naviguer sur le site.

Vous allez être rediriger vers Google.