The LSIC1MO170E1000 is an important addition to the company's 1200V SiC MOSFET and diode offerings for applications including electric and hybrid vehicles, datacentres, and auxiliary power supplies. When compared to similarly-rated Si IGBTs, the 1Ω LSIC1MO170E1000 SiC MOSFET enables a number of system level optimization opportunities, including increased efficiency, increased power density, decreased cooling requirements, and potentially lower system level costs.
The SiC MOSFETs deliver on par or better performance in all aspects when compared head-to-head with other industry-leading SiC MOSFET devices on the market. Other applications for the SiC MOSFET LSIC1MO170E1000 include solar inverters, Switch-mode and uninterruptible power supplies, motor drives, high-voltage DC-DC converters and induction heating.
“This product can improve existing applications, and the Littelfuse application support network can help new design-in projects,” said Michael Ketterer, Global Product Marketing Manager, Power Semiconductors, Semiconductor Business Unit at Littelfuse. “SiC MOSFETs offer a rewarding alternative to traditional Si-based power transistor devices. The MOSFET device structure enables lower per-cycle switching losses and improved light load efficiency when compared to similarly-rated IGBTs. Inherent material properties allow the SiC MOSFET to outclass its Si MOSFET counterparts in terms of blocking voltage, specific on resistance, and junction capacitances.”
The LSIC1MO170E1000 SiC MOSFETs are available in TO-247-3L packages in tubes in quantities of 450.