1200V SiC MOSFET cuts on resistance

June 17, 2020 //By Nick Flaherty
Rohm's fourth generation 1200V silicon carbide SiC MOSFETs cut on resistance by 40 percent and parasitic capacitance by half.
Rohm's fourth generation 1200V silicon carbide SiC MOSFETs cut on resistance by 40 percent and parasitic capacitance by half.

Rohm has launched its fourth generation silicon carbide SiC 1200V MOSFET for automotive powertrain and industrial motor contorl applications.

The 1200V SiC MOSFET is optimized for 800V automotive battery packs and powertrains, including the main drive inverter, as well as power supplies for industrial equipment.

Improvement to the double trench structure have reduced the On resistance per unit area by 40 percent over the previous generation without sacrificing short-circuit withstand time. The RDS(on) at 18V is 12mΩ at 25˚C

This has also led to a significant reduction in the parasitic gate-drain capacitance (Cgd) which can cause a problem during switching. The gate-source capacitance (Cgs) and gate-drain capacitance (Cgd) are determined by the capacitance of the gate oxide film, while the drain-source capacitance (Cds) is the junction capacitance of the parasitic diode. The reduction in Cgs makes it possible to cut the switching loss in half over those previous devices.

The company has signed a deal to supply Continental subsidairy Vitesco with volume SiC MOSFETs for automotive powertrain designs:  CONTINENTAL SPINOUT BACKS ROHM FOR VOLUME SIC PRODUCTION  

Rohm launched the first trench-based SiC MOSFET devices in 2010 with AEC-Q101 qualification and has gained a significant market share for automotive onboard chargers (OBC).

Bare chip samples have been made available from June 2020, with discrete packages to be offered in the future.

www.rohm.com/eu

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