1200V SiC module adds ceramic baseplate for thermal management

April 29, 2021 // By Nick Flaherty
1200V SiC module adds ceramic baseplate for thermal management
Infineon Technologies has upgraded its silicon carbide (SiC) MOSFET module with a ceramic baseplate to improve the thermal properties and boost reliability.

The latest EasyDUAL CoolSiC MOSFET modules come in half-bridge configuration with an on-state resistance (R DS(on)) of 11 mΩ in an EasyDUAL 1B package and 6 mΩ in an EasyDUAL 2B package.

With a high-performance with aluminum nitride (AIN) ceramic baseplate, the 1200 V devices are suitable for high-power density applications including photovoltaic systems, uninterruptible power supplies, auxiliary inverters, energy storage systems and electric vehicle chargers.

The FF11MR12W1M1_B70 and FF6MR12W2M1_B70 modules are equipped with the latest CoolSiC MOSFET technology with improved gate-oxide reliability. With the improved thermal conductivity of the ceramic baseplate material, the thermal resistance to the heat sink (R thJH) can be lowered by up to 40 percent. Combined with the CoolSiC Easy modules, the new AIN ceramic enables an increase of the output power or reduces the junction temperatures. This can lead to an improved lifespan of the system.

The EasyDUAL CoolSiC MOSFET modules FF11MR12W1M1_B70 and FF6MR12W2M1_B70 are now available.

www.infineon.com/easy

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Picture: 
Infineon's EasyDual 1200V SiC module

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