The UJ3C1200 series has a voltage rating of 1200 V and ON-resistances of 80 and 40 milliohms and provide a ‘drop-in’ replacement solution for many existing IGBT, Si-MOSFET and SiC-MOSFET parts with no change to gate drive circuitry. This simplifies design upgrades and provides an alternative-purchasing source for existing parts.
Applications include on-board EV chargers, battery charging for forklifts, PV inverters and welding systems.
“These exciting new devices enable designers to deploy SiC technology without worrying about gate drive complexity. The high-performance body diode and integrated gate ESD protection give added value to designers while purchasers are helped with a second source to many existing sole-supplier parts,” said Anup Bhalla, VP Engineering at UnitedSiC.
The devices use UnitedSiC’s Gen 3 SiC transistor technology, integrating a SiC JFET with a custom-designed Si-MOSFET to produce the ideal combination of normally-OFF operation, high performance body diode and easy gate drive of the MOSFET with the efficiency, speed and high temperature rating of the SiC JFET. This gives existing systems a performance increase with lower conduction and switching losses, enhanced thermal properties and integrated gate ESD protection. In new designs, the UnitedSiC UJ3C1200 series delivers increased switching frequencies to gain substantial system benefits in both efficiency and reduction in size and cost of passive components, such as magnetics and capacitors.
The UJ3C1200 series SiC FETs are available now at licensed Distributors with prices starting at $10.39 in 500+ quantities.