100V power MOSFETs with low Qrr and 175°C rating

March 02, 2018 //By Nick Flaherty
100V power MOSFETs with low Qrr and 175°C rating
Nexperia, the former Standard Products division of NXP, has launched a 100V family of power MOSFETs with low reverse recovery charge (Qrr) that can be qualified to 175°C in PowerSO8 packaging.

The NextPower 100V MOSFETs are Nexperia’s latest generation parts for high efficiency switching and high reliability applications.  With 50% lower RDS(on) and strong avalanche energy rating, they are aimed at power supply, telecom and industrial designs, especially USB-PD Type-C chargers and adaptors and 48 V DC-DC adaptors. 

The devices feature low body diode losses with a Q RR down to 50nC, giving lower reverse recovery current (I RR), lower voltage spikes (Vpeak) and reduced ringing which allows for further optimised dead-time.

“QRR is a frequently overlooked parameter, yet it can have a significant effect on many design aspects," said Mike Becker, Product Manager for Power MOSFETs. "Low spiking means EMI is reduced, while optimised dead-time gives further efficiency gains, which is our driving ambition at Nexperia. We have shown that low Q RR is beneficial to both functions.”

The NextPower 100 V MOSFETs are available in three packages: TO220 and I2PAK through-hole and the LFPAK56 surface mount PowerSO8 package. All package variants feature Tj(max) of 175°C, and fully meet the extended temperature requirements of IPC9592 for telecom and computing applications.

The NextPower MOSFETS are available now, and there is a discussion on the use of Q RR as a metric at  efficiencywins.nexperia.com/efficient-products/qrr-overlooked-and-underappreciated-in-efficiency-battle.html



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