The NextPower 100V MOSFETs are Nexperia’s latest generation parts for high efficiency switching and high reliability applications. With 50% lower RDS(on) and strong avalanche energy rating, they are aimed at power supply, telecom and industrial designs, especially USB-PD Type-C chargers and adaptors and 48 V DC-DC adaptors.
The devices feature low body diode losses with a Q RR down to 50nC, giving lower reverse recovery current (I RR), lower voltage spikes (Vpeak) and reduced ringing which allows for further optimised dead-time.
“QRR is a frequently overlooked parameter, yet it can have a significant effect on many design aspects," said Mike Becker, Product Manager for Power MOSFETs. "Low spiking means EMI is reduced, while optimised dead-time gives further efficiency gains, which is our driving ambition at Nexperia. We have shown that low Q RR is beneficial to both functions.”
The NextPower 100 V MOSFETs are available in three packages: TO220 and I2PAK through-hole and the LFPAK56 surface mount PowerSO8 package. All package variants feature Tj(max) of 175°C, and fully meet the extended temperature requirements of IPC9592 for telecom and computing applications.
The NextPower MOSFETS are available now, and there is a discussion on the use of Q RR as a metric at efficiencywins.nexperia.com/efficient-products/qrr-overlooked-and-underappreciated-in-efficiency-battle.html