100V, 74A eGaN transistor targets 48V applications

March 15, 2019 //By Nick Flaherty
100V, 74A eGaN transistor targets 48V applications
Efficient Power Conversion (EPC)has launched a 100 V GaN transistor with a maximum RDS(on) of 13.5mΩ and a 74 A pulsed output current for high efficiency power conversion in a 2.25sq mm footprint.

In a 48 V to 12 V DC-DC converter, the EPC2052 achieves over 97% efficiency at 500 kHz and greater than 96% efficiency at 1 MHz with a 10A output for motor drives and Lidar designs.

Applications demanding higher efficiency and power density no longer have to choose between size and performance. The EPC2052 measures just 1.50 mm x 1.50 mm (2.25 mm 2). 

The low cost of the EPC2052 brings the performance of GaN FETs at a price comparable to silicon MOSFETs for 48V input power converters for computing and telecom systems, Lidar, LED Lighting, and Class-D audio.

“The ability of eGaN based power devices to operate efficiently at high frequency widens the performance and cost gap with silicon. The 100 V, EPC2052, is significantly smaller than the closest silicon MOSFET and the high frequency operation allows even further space savings opportunities to designers.” said Alex Lidow, EPC’s CEO. Development Board

The EPC9092 development board is a 100 V maximum device voltage, half bridge featuring the EPC2052, and the LMG1205 gate driver from Texas Instruments. The 2” x 2” (50.8 mm x 50.8 mm) board is designed for optimal switching performance and contains all critical components for easy evaluation of the 100 V EPC2052 eGaN FET.

The EPC2052 eGaN FET is priced for 1K units at $0.68 each and $0.54 in 100K volumes and the EPC9092 development board is priced at $118.75 each.

Both are available from Digi-Key 

epc-co.com


Vous êtes certain ?

Si vous désactivez les cookies, vous ne pouvez plus naviguer sur le site.

Vous allez être rediriger vers Google.