World’s first leadless 650V SiC MOSFET

World’s first leadless 650V SiC MOSFET
Technology News |
onsemi has launched the first 650V silicon carbide (SiC) MOSFET in a TO leadless package at the PCIM show in Germany. Moving to a leadless package reduces the board footprint required for a discrete device but more importantly reduces the inductance, giving a lower on resistance. The footprint of 9.90…
By Nick Flaherty

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onsemi has launched the first 650V silicon carbide (SiC) MOSFET in a TO leadless package at the PCIM show in Germany.

Moving to a leadless package reduces the board footprint required for a discrete device but more importantly reduces the inductance, giving a lower on resistance.

The footprint of 9.90 mm x 11.68 mm for the onsemi TOLL package is a 30% saving in board area over a D2PAK 7 lead package, with a height of 2.30 mm for more compact power supply designs.

The first SiC MOSFET in the 4 lead Kelvin TOLL package is the 650V NTBL045N065SC1 which has a typical RDS(on) of 33 mΩ and a maximum drain current (ID) of 73 A. This is aimed at switch-mode power supplies (SMPS), server and telecommunication power supplies, solar inverters, uninterruptible power supplies (UPS) and energy storage. The device is suitable for designs that are required to meet the latest efficiency standards including ErP and 80 PLUS Titanium.

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The SiC MOSFET has a maximum operating temperature of 175°C and ultra-low gate charge (QG(tot) = 105 nC) that significantly reduces switching losses. The TOLL package is rated to moisture sensitivity level 1 (MSL1) to minimise failure rates in mass production.

The four lead Kelvin source configuration reduces gate noise and switching losses, giving a 60% reduction in turn-on loss (EON). This helps boost the power density in challenging power designs as well as improved EMI and easier PCB design.

“The ability to deliver highly reliable power designs in a small space is becoming a competitive advantage in many areas, including industrial, high performance power supplies and server applications,” said Asif Jakwani, senior vice president and general manager, Advanced Power Division, onsemi. “Packaging our best-in-class SiC MOSFETs in the TOLL package not only reduces space but enhances performance in many areas such as EMI and reduces losses. The result is a highly reliable and rugged high-performance switching device that will help power designers meet their stringent power design challenges.”

onsemi also offers automotive grade devices with TO-247 3 lead, 4 leads and D2PAK 7 leads packages.

www.onsemi.com

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