Wolfspeed extends 650/1200V silicon carbide diode specs

New Products |
By Graham Prophet

The 650V 12A C3D12065A and 16A C3D16065A Z-Rec SiC Schottky diodes are supplied in TO-220-2 packages, and are targeted at PFC boost stages in server power supplies, especially next-generation systems rated for 1100W, 1600W, 2000W, and 2400W with low-line or high-line inputs. They are also available as bare die. The 650V 2x15A C3D30065D Z-Rec diodes are supplied in TO-247-3 packages, and are best suited for rectification applications in 3-5kW power supplies. Also supplied in TO-247-3 packages, the 1200V 2×7.5A C4D15120D Z-Rec diodes are ideal for use in PV inverters and on- and off-board chargers.


All four diodes have a dV/dt rating of 200 V/nsec, claimed as the industry’s highest. This dV/dt rating suits these Schottky diodes as a pairing for both silicon IGBTs and SiC MOSFETs, enabling high-speed system optimization while simultaneously maximizing reliability, minimizing dead time, and enabling greater resonant frequencies.


Developed in response to demand for components with larger nominal current ratings, the 650V and 1200V Cree Z-Rec SiC Schottky diodes enable high efficiency power conversion systems with improved reliability, simplicity, and total cost. Characteristics of these SiC Schottky diodes include: zero reverse recovery current, zero forward recovery voltage, high frequency operation with low EMI, temperature-independent switching behaviour, extremely fast switching, reduced heat sink requirements, near-zero switching losses, and significantly higher efficiency, as well as industry-leading surge capabilities, as compared to analogous silicon diodes. A positive temperature coefficient on VF also enables parallel devices without thermal runaway, and each of the four new diodes provides engineers with an attractive price/performance ratio when compared to competitive offerings.




To access SPICE models for these diodes, visit


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