Ultra-fast 1200-V IGBTs reduces switching and conduction losses

New Products |
By eeNews Europe

The new family of ultra-fast 1200 V IGBTs utilizes thin wafer Field-Stop Trench technology that significantly reduces switching and conduction losses to deliver higher power density and greater efficiency at higher frequencies. These devices are further optimized for applications that do not require short-circuit capability such as UPS, solar inverters, and welding, and complement IR’s products with 10 microsecond short circuit capability for motor drive applications.

Covering a broad current range from 20 – 50 A as packaged devices and up to 150 A for die products, key performance benefits include wide square reverse bias safe operating area (RBSOA), positive VCE(on) temperature coefficient, and low VCE(on) to reduce power dissipation and achieve higher power density. In addition, devices are available with or without an internal ultra-fast soft recovery diode. Die products are also available with solderable front metal (SFM) for improved thermal performance, reliability and efficiency.

Pricing for the IRG7PH35UPBF begins at $3.00 each in 10,000-unit quantities. Production quantities are available immediately.

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