Ultra-compact PQFN2x2 power MOSFET focuses on low power applications  

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By eeNews Europe

Featuring a footprint of just 4 mm², the PQFN2x2 devices,  which are available in 20 V, 25 V and 30 V with standard or logic level gate  drive, utilize IR’s latest low voltage N-Channel and P-Channel silicon  technologies to offer low on-resistance (RDS(on)), and high power density  in line with a PQFN3.3×3.3 or PQFN5x6 package.         

The PQFN2x2 family includes P-Channel devices optimized for use in the high-side of load switches, providing a simpler drive solution. Featuring a low profile of less than 1 mm, the devices are compatible with existing surface mount techniques, feature industry-standard footprint and are RoHS compliant. 

Pricing for the IRFH6342 begins at US $0.33 each in 1,000-unit quantities. Production orders are available immediately.      

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