Two team for first GaN data centre power supply over 100W/cu in
xFusion Digital Technologies in China is using gallium nitride transistors from GaN Systems for the first 3kW data centre power supply to reach a power density of 100W/in3 (6W/cc).
Xfusion’s 3kW supply meets the 80 Plus Titanium energy efficiency requirement of 96% and measures 68mm x 183mm x 40.5mm.
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“Customers implementing GaN Systems’ power semiconductors in their PSUs are seeing a continual increase in PSU power density from 45W/in3 to 63/in3, 82/in3, and now to 100W/in3,” said Jim Witham, CEO of GaN Systems. “With these power density breakthroughs and efficiency improvements, the value proposition of GaN is undeniable, and we will see more PSU companies offering these solutions.”
The growth of the data centre sector worldwide is driving operators to increase efficiency and reduce the size of the power supplies. Using GaN can cut the size and power losses of the supplies by 50% compared to silicon-based power supplies. For each set of 10 racks in the data centre, GaN-based PSUs can increase profits by $3 million, and reduce the carbon dioxide emissions output by more than 100 metric tons per year, says Witham.
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