Toshiba’s new automotive MOSFET line-up comprises eleven n-channel devices offering a choice of maximum voltage ratings of 40 V, 60 V and 100 V, and 10 p-channel parts with maximum voltage ratings of -40 V and -60 V. Current ratings range from ±8 A to ±80 A depending on the device chosen. All of the MOSFETs are designed to operate in automotive environments with channel temperatures of up to 175 ºC. Target applications include switching regulators, DC-DC converters and motor drives.
The DPAK+ package has the same form factor as – and is pin-to-pin compatible with – a conventional DPAK package. However, a proprietary internal design reduces on resistance and thermal losses and ensures improved efficiency, current handling and reliability when compared with conventional DPAK alternatives.
Based on Toshiba’s proprietary ‘WARP’ technology, DPAK+ replaces conventional internal aluminium bondwires between the MOSFET die and the package leads with wider copper clamps. The clamping mechanism maintains a highly reliable mechanical connection capable of withstanding repeated power cycling as well as exposure to shock and vibration. In addition, the larger cross-sectional area, combined with higher electrical connectivity, minimises I2R heating due to package losses and reduces package inductance. This, in turn, contributes to heat reduction, lower noise and faster device operation.
MOSFETs in the new DPAK+ automotive family have low leakage currents and ultra-low on resistances as low as 2.4 mΩ (typical, VGS = 10 V). Typical thermal resistance between channel and case is only 1.5 º/W, while power dissipation at 25 ºC is just 100 W.
For more information visit Toshiba’s web site at www.toshiba-components.com.