The RFPA5522 is manufactured on an advanced InGaP heterojunction bipolar transistor (HBT) process and is capable of achieving linear powers up to 23 dBm with an EVM <1.8% while maintaining excellent power added efficiency. The device is provided in a 4.0- x 4.0- x 0.9-mm laminate package that meets or exceeds the power requirements of IEEE802.11a/n/ac WiFi RF systems.
The device features an output power of 23 dBm at 5 V, 11ac, 80 MHz MCS9 at 1.8% EVM. Typical transmitter gain is 33 dB. Other features include high PAE, integrated regulator, and integrated power detector, harmonic filter, and notch filter.