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Silicon carbide 1200V FETs in distribution

Technology News |
By eeNews Europe

The second-generation SiC Z-FET 1200V MOSFET C2M0080120D delivers industry-leading power density and switching efficiency, at half the cost-per-amp of Cree’s previous-generation MOSFETs. At this price-to-performance point, the new device lowers system costs for OEMs and provides additional savings to the end-user through increased efficiency and lower installation costs, due to the lower size and weight of SiC-based systems. Features include; high-speed switching with low capacitances; high blocking voltage with low RDS(on); avalanche ruggedness; resistant to latch-up; and easy parallel connection, with simple drive arrangements. The devices come in a TO-247-3 package.

Richardson RFPD, www.richardsonrfpd.com


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