Showa Denko (SDK) in Japan has signed a deal with Toshiba Electronic Devices & Storage to supply SiC epitaxial wafers for power semiconductors for the next two and a half years.
SDK believes it is the largest independent manufacturer of SiC epi-wafers and expects the deal to boost SDK’s Si epi-wafer business further. It already has deals with Infineon Technologies in Germany and Denso in Japan, and two weeks ago signed a similar long term deal with Rohm.
Supply of wafers will be increasingly critical to maintain production for power devices, particularly for electric vehicles.
Toshiba has been developing and commercializing various kinds of SiC-based power devices including inverters for railway designs since 2013 and uses epi-wafers from SDK. These are used for SiC-based schottky barrier diodes (SiC SBD) and MOSFETs.
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The long-term contract, which has an option to extend, will further strengthen technical cooperation between SDK and Toshiba on improvement in performance of SiC epi-wafers.
The deal highlights the homogeneity in doping of nitrogen which determines the physical properties of the epi-wafer for high voltage power semiconductors. SDK’s second generation high-grade SiC epi-wafer (HGE-2G), which is to be supplied for Toshiba, has reduced the density of surface defects of half compared to that of the first generation product (HGE).
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