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Rohm, Delta team for next generation GaN in power supplies

Business news |
By Nick Flaherty

Delta Electronics has signed a strategic deal with Rohm to develop and mass produce next-generation gallium nitride (GaN) power devices.

The two companies aim to extend the current 650V threshold voltage of GaN devices optimized for a wide range of power supply systems.

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Rohm has already established a mass production system for 150V GaN HEMTs featuring a breakthrough 8V gate withstand voltage last month. The deal will allow ROHM to expand its lineup of EcoGaN for power circuits in IoT communication and industrial equipment such as base stations and data centres while further improving device performance.

“Rohm is extremely pleased to enter into a strategic partnership for GaN power devices with Delta, a global leader in power and thermal management. As power semiconductors – a key area of focus for Rohm – play an increasingly important role in achieving a decarbonized society, ROHM will continue to develop advanced devices in a range of fields utilizing Si, SiC, and GaN, along with solutions that combine peripheral components such as control ICs that maximize their performance,” said Kazuhide Ino, Managing Executive Officer, CSO, for Rohm.

“Through this partnership, Rohm will mass produce GaN power devices that can contribute to the configuration of more efficient power supply systems as well as develop GaN intelligent power modules (IPMs) that integrate analog ICs at an early stage, further expanding our lineup of easy-to-use products.”

“The development of GaN power devices is of significant interest to the global electronics industry. We have been working with Rohm for many years, and are very pleased that this year’s technical exchange will finally produce results,” said Mark Ko, Vice Chairman of Delta Electronics.

“In addition to this GaN collaboration, Delta is looking to further strengthen its product lineup as a key business strategy, with high expectations for product development utilizing Rohm’s strengths in analog (Nano) and other technologies. We believe that strengthening our collaboration with Rohm will allow us to provide a wide range of solutions that meet the needs of the global power supply market,” he added.

The adoption of new materials such as SiC and GaN is expected to further increase the efficiency of power supplies and Rohm has been developing core technology in both areas with Delta for many years. Through this partnership both companies will develop and mass produce the industry’s most advanced GaN power devices that maximize GaN performance to accelerate power technology innovation and contribute to achieving a sustainable society.

EcoGaN is Rohm’s lineup of GaN devices by maximizing the low ON resistance and high-speed switching characteristics of GaN to achieve lower application power consumption, smaller peripheral components, and simpler designs that require fewer parts.

www.rohm.com; www.deltaww.com/

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