RAD-Hard MOSFETs boost efficiency up to 6 percent while halving footprint
The new R8 logic level power MOSFETs utilize Trench technology to offer extremely low on-state resistance (RDS(on)) of 12 milliohms (typical) and total gate charge (QG) of 18 nC (typical), increasing efficiency performance by up to six percent compared to existing solutions. The IRHLNM87Y20SCS device has a BVDSS rating of 20 V and a maximum drain current (ID) rating of 17 A. The new devices are available in IR’s new SMD 0.2 surface-mount style package, achieving a 50% space saving compared to the existing SMD 0.5 package solution. The devices are also offered in a TO-39 package or in die form for microcircuit design solutions.
The products are fully characterized for radiation performance to 300Krads of TID and SEE with LET of 81 MeV-cm²/mg with VGS rating of 12 V. Depending on the intended design orbit and anticipated radiation environment, R8 RAD-Hard MOSFETs may be well suited for applications requiring a mission life of 15 years or more.
Availability and Pricing
Pricing for the R8 MOSFETs begins at $594 each for 250-unit quantity. Production orders are available immediately.
More information about the IRHLNM87Y20SCS and IRHLF87Y20SCS power MOSFETs at www.irf.com/product-info/datasheets/data/irhlnm87y20.pdf and
www.irf.com/product-info/datasheets/data/irhlf87y20.pdf
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