Power block devices deliver power density benefits for DC-DC synchronous buck applications

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By eeNews Europe

The 25 V IRFH4251D and IRFH4253D feature IR’s latest generation silicon in a novel package that delivers benchmark power density in a 5×6 mm PQFN. The new Power Block devices feature an integrated monolithic FETKY, and innovative package employing a leading-edge flipped-die technology that enables efficient dissipation of the heat from the source of the synchronous MOSFET directly to the ground layers of the PCB. As a result of improved thermal performance and increased power density, one of the new 5×6 dual devices may replace two 5×6 standard single devices. The new package also utilizes IR’s proprietary single copper clip already employed in PowIRStage and SupIRBuck products, as well as an optimized layout that significantly reduces stray inductance to lower peak ringing. This allows the designer the option to use 25 V MOSFETs in place of less efficient 30 V devices.

Optimized for 5 V gate drive applications, the IRFH4251D and IRFH4253D work with any controller or driver to offer design flexibility while delivering higher current, efficiency and frequency capability in a small footprint compared to alternative approaches using two discrete 30 V power MOSFETs.

Availability and Pricing

Pricing for the IRFH4253D and IRFH4251D begins at $0.89 and $1.29 respectively in 10,000-unit quantities. Production orders are available immediately.

More information about the IRFH4253D and IRFH4251D power block devices at


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