NXP provides live demo of next-generation GaN technology

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By eeNews Europe

NXP has developed its high-frequency, high-power GaN process technology in collaboration with United Monolithic Semiconductors and the Fraunhofer Institute for Applied Solid State Physics. NXP is now positioned as the largest semiconductor company to offer both LDMOS and GaN solutions. Engineering samples of NXP’s first GaN power amplifiers are available immediately.

NXP’s GaN devices are manufactured on SiC substrates for enhanced RF and thermal performance.

Target end-user applications for NXP’s GaN include cellular communications, wideband amplifiers, ISM, PMR, radar, avionics, RF lighting, medical, CATV and digital transmitters for cellular and broadcast.

With its high power densities, GaN has the potential to expand into applications such as high power broadcast applications, where solid-state power amplifiers built with vacuum tubes are still the norm.

While most base station power amplifiers today are limited to specific applications, NXP’s new GaN process technology supports a roadmap towards a “universal transmitter” that can be applied in multiple systems and frequencies, simplifying transmitter production and logistics, and allowing operators to switch between frequency bands to instantly meet demands in a base station’s coverage area.

NXP’s GaN broadband power amplifiers are expected to be available for volume production at the end of 2011.

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