New LDMOS power transistors optimized for picocell and microcell systems feature world’s first asymmetric MMICs
With dedicated solutions for both picocell and microcell architectures – which average 1 to 2 W, and 8 to 12 W, respectively – the RF power transistors span frequency ranges from 700 MHz to 2.7 GHz and include the world’s first asymmetric MMICs, as well as low-cost, low-power plastic devices. Delivering an optimal balance of energy efficiency and integration, NXP’s extensive high-performance RF portfolio provides unprecedented flexibility in designing highly scalable, cost-optimized systems.
NXP solutions for microcells include:
Asymmetric and symmetric MMICs for dual-stage microcells. NXP has introduced a new range of monolithic microwave integrated circuits, including the industry’s first asymmetric MMICs, which provide more power efficiency at back-off and offer increased flexibility, particularly in Doherty configurations in microcells and antenna arrays. The first MMIC based on NXP’s Gen7 LDMOS technology, the BLM7G22S-60PB(G), is fully released, with qualification samples of 7 new product types now available. All 7 MMICs are dual path with two separate amplifiers, each with 30-dB gain and a certain power rating of P1 dB. Ideal for dual-stage micro base stations where high integration is a priority, NXP’s family of symmetric and asymmetric MMICs offer a modular approach, allowing different power levels on each path, as well as better isolation between the two paths for better Doherty performance and stability.
LDMOS power transistors for single-stage, high-performance microcells. For the most performance-sensitive microcells, NXP has introduced a range of single-stage dual-path devices in different bands, including the BLF6G22LS-40P and the BLF6G27LS-40P, which are currently in volume production. Additional products, including the BLP7G10S-45P, the BLP7G22S-60P and the BLF8G27LS-50A are currently in development.
Solutions for picocells include:
Low-power LDMOS transistors. NXP now offers the plastic 10-W BLP7G22-10, providing 17 dB gain at 2.0 GHz, and the 7.5-W BLP7G27-07, providing 15.3 dB gain at 2.6 GHz, for final-stage picocell applications in a variety of configurations from Class A to Doherty. NXP’s low-power plastic LDMOS transistors offer high performance at 12 volts, with a peak power of 4 watts – for example, in a high-efficiency 1 watt picocell using two devices in a Doherty configuration. Further, as pre-drivers or drivers in both micro and macro base stations, they can serve as low-cost alternatives to the ceramic BLF6G21-10G and BLF6G27-10G, which are in mass production. NXP is also developing two MMICs for this power class.
NXP is showcasing the new small cell portfolio at European Microwave Week in Amsterdam (booth 515), and an explanation of NXP’s modular approach to MMICs is available here: https://youtu.be/LbJzeMZDhkI
More information about the NXP RF power transistors for base stations at