Multi-function upconverter MMICs extend to 24 GHz
Based on GaAs pseudomorphic high-electron-mobility-transistor (pHEMT) technology, the highly integrated MMICs incorporate several frequency mixers, local oscillator (LO) amplifier or frequency doubler, and variable-gain RF amplifier circuitry. They are well suited for a wide range of applications, including in commercial and military transmitter systems. The lower-frequency model EWU1509YF GaAs MMIC upconverter operates over an IF range of DC to 4 GHz with LO signals from 6.0 to 19.4 GHz at a nominal level of +2 dBm to produce RF outputs from 10.0 to 15.4 GHz. It achieves typical conversion gain of 16 dB and +19 dBm typical RF output power at 1-dB compression.
RF output levels can be adjusted in level by means of a 27-dB RF gain-adjustment range. The output third-order intercept point is typically +28 dBm at the maximum RF gain setting. Model EWU1509YF is designed for low-power applications, drawing typically only 380 mA current from a +4.5 VDC supply.
The higher-frequency model EWU1809YF GaAs MMIC upconverter accepts IF signals from DC to 4.5 GHz and LO signals from 8.5 to 12.0 GHz and nominally +2 dBm to produce RF output signals from 17.0 to 24.0 GHz with typical conversion gain of 5 dB. It generates +19 dBm typical RF output power at 1-dB compression, but allows this level to be adjusted by means of an integrated 18-dB RF gain adjustment range. The output third-order intercept point is typically +25 dBm at the maximum RF gain setting.
Both GaAs MMIC frequency upconverters feature integrated electrostatic-discharge (ESD) protection bias circuitry per Human Body Model (HBM) Class 1A requirements. The RoHS-compliant devices are housed in a 5x5mm, 32-lead, plastic-overmolded QFN surface-mount-technology (SMT) packages and rated for operating temperatures from -55 to +85°C.
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