MOSFETs for high-speed switching applications fit new 3.3 x 3.3 mm TSON Advance package

New Products |
By eeNews Europe

Based on Toshiba’s 7 th generation, high-speed UMOS VII-H semiconductor process, the latest additions to the TPCx family of low withstand voltage power MOSFETs comprises nine devices in SOP-8 and the new TSON Advance package formats. The latter bridges the gap between industrial standard SOT23 and SOP8 package formats – at just 3.3 mm x 3.3 mm this package format delivers a 64% smaller footprint than a SOP-8 device with an equivalent power rating.
Toshiba’s UMOS VII-H low-voltage trench structure allows the new MOSFETs to deliver a combination of low on resistance (R DS(ON) ) and high-speed switching characteristics. In addition a low internal gate resistance and a low C gd /C gs gate capacitance ratio helps to prevent the possibility of self turn-on.
All of the new MOSFETs have a maximum V DSS rating of 30 V and a maximum V GSS rating of ±20 V. Typical R DS(ON) values (V GS = 10 V) range from 20 mΩ down to just 6.0mΩ depending on the device chosen. TPC806x-H and TPC822x-H devices are supplied in SOP-8 and dual Chip SOP-8 packages respectively. TPCC806x-H parts in the TSON advanced package achieve a power dissipation of 1.9 W, due to a metal base plate.

Visit Toshiba Electronics Europe (TEE) at


Linked Articles
eeNews Power