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MOSFET photocoupler adds under voltage lockout

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By Nick Flaherty

The UVLO in the TLP2735 cuts the photocoupler’s susceptibility to noise such as that generated in power supply cables, and can prevent malfunctioning when products are switched on. With an isolation voltage of 5kVrms (min) between the input and output, as well as conformity with the IEC60747-5-5 photocoupler safety standard, the device is also suitable for applications requiring high insulation performance.

The operating power supply voltage in the output side is 9 to 20V, specifications suited to MOSFET gate voltages, and the propagation delay time is 100ns (max) is low for a photocoupler designed for MOS gate insulation. As its power supply voltage is high, it can also be used for IPM input insulation. Adding a buffer circuit to the subsequent stage of TLP2735 allows a MOSFET insulation gate drive circuit to be implemented. In addition, with its operating temperatures of -40 to 125 ºC, it can also be used in a high temperature environment for digital control switching power suppllies or industrial automation equipment.

The thin SO6L package has a long creepage distance, with a height of 2.3 mm (max) and creepage and clearance of 8mm (min).

 

Main Specifications

(Unless otherwise specified @Ta= -40 to 125℃)

Part
Number

  Package  

Creepage
distances
min (mm)

 

Absolute
maximum
ratings

 

Isolation
voltage
BVS
min
@Ta=25℃
(kVrms)

 

Threshold
input current
(H to L)
IFLH
max
(mA)

 

UVLO
threshold
voltage
VUVLO+,
VUVLO-
typ.
(V)

 

Propagation
delay time
tpHL, tpLH
max
(ns)

 

Common-
mode
transient
immunity
CMH, CML
min
(kV/μs)

     

Operating
temperature
Topr (℃)

         
TLP2735   SO6L   8   -40 to 125   5   3   8.1/7.5   100   25
 
 

toshiba.semicon-storage.com/ap-en/product/opto/photocoupler.html


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