M/A-COM Technology unveils new portfolio of GaN-based RF Power transistors

New Products |
By eeNews Europe

The GaN on Silicon Carbide (SiC) products, offered as transistors and pallets, utilize a 0.5 micron HEMT process and exhibit attractive RF performance parameters with respect to power, gain, gain flatness, efficiency and ruggedness over wide-operating bandwidths. Featured benefits include high breakdown voltage, superior power density, and higher and broader frequency operation than silicon.     

M/A-COM plans to release later in 2011 additional products that target applications such as L-Band radar, avionics, EW, and MILCOM, as well as general purpose devices. Engineering samples for GaN transistors and pallets are available for qualified customers today from stock.      

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