The GaN on Silicon Carbide (SiC) products, offered as transistors and pallets, utilize a 0.5 micron HEMT process and exhibit attractive RF performance parameters with respect to power, gain, gain flatness, efficiency and ruggedness over wide-operating bandwidths. Featured benefits include high breakdown voltage, superior power density, and higher and broader frequency operation than silicon.
M/A-COM plans to release later in 2011 additional products that target applications such as L-Band radar, avionics, EW, and MILCOM, as well as general purpose devices. Engineering samples for GaN transistors and pallets are available for qualified customers today from stock.
For further information: www.macomtech.com.