Low on-resistance N-Channel MOSFETs target USB-C

New Products |
By Nick Flaherty

The SSM6K513NU and SSM6K514NU help contribute to high system efficiency, low power consumption and are aimed at the latest battery operated portable applications.

Toshiba’s ‘U-MOS IX-H series’ trench process provides N RDS(ON)  of 6.5mΩ for the 30V SSM6K513NU and 8.9mΩ for the 40V SSM6K514NU. This allows the new products to reduce heat dissipation resulting from turn-on loss by approximately 40% when compared with Toshiba’s existing products such as the SSM6K504NU.

The SSM6K513NU and SSM6K514NU are suitable for use in electric power switching applications over 10W, including small-size mobile devices that meet the USB Type-C and USB Power Delivery (PD) standards. Both MOSFETs are housed in compact SOT-1220 packages.


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