The new IR MOSFET devices deliver between 11 and 40 percent lower R DS(on) than competitive products, claims the manufacturer, while the ultra-low gate charge (Q g) reduces switching losses without increasing conduction losses. In addition, the output capacitance (C OSS) and reverse recovery charge (Q rr) have been optimized, the FOM g (R DS(on) x Q g/gd) improved. This allows the IR MOSFET devices to operate at high switching frequencies of up to 6.78 MHz as required in resonant wireless charging applications. The logic level gate drive provides a low gate threshold voltage (V GS(th)) which means that the MOSFETs can be driven at 5 V and directly from microcontrollers.
Infineon – www.infineon.com