The Drive-By-Microwave (DBM) isolated gate driver technology supplies not only isolated signals but also isolated power to a power device. This eliminates the need for an external isolated power supply, and significantly simplifies and downsizes gate drive circuits for power devices such as silicon carbine (SiC) MOSFETs and silicon IGBTs.
The company is also showing its DioMOS (Diode-integrated SiC MOSFET) structure that enables SiC modules to be reduced in size by integrating a high performance unipolar reverse diode in the channel of the MOFSET. SiC power devices can realize low-loss operation that surpasses silicon power devices and play a key role in saving energy in high current, high voltage applications.
The technology was developed with Sansha Electric in 2015 and at PCIM 2018 Panasonic has been showing prototypes of power modules with built-in SiC-DioMOS. The original total chip area was half that of a conventional SiC devices with an RDS(on) of 6mΩ at 150A. A module built by Sansha used solder bonding for the SiC chips without any wire bonding which cut the height of the module in half and boosted the endurance of power cycling tests by three.
Panasonic has also demonstrated the next version of its Pyrolytic Highly Oriented Graphite Sheet (PGS) thermal systems. These have a thermal conductivity of 1950 W/m K that is five times higher than common materials like copper. Soft-PGS has been developed as a thermal interface material (TIM) and boasts a high thermal conductivity of 28 W/m K, compressibility of 40%, easy handling and high reliability over its whole product life. The Soft-PGS graphite sheet consists of a 2D carbon matrix only 200 µm thick, which effectively disperses and transfers heat along X,Y and Z axes, protecting sensitive electronics like server units, IGBT modules or common inventors from damage.