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IGBTs and MOSFETs continue to drive power semiconductor growth

Market news |
By eeNews Europe

The market researcher’s report entitled ‘Next-Generation Power Semiconductors: Markets Materials, Technologies’ concluded that Infineon’s combined revenues in both sectors was enough to maintain its lead in the overall power semiconductor market.  The Information Network point out that this year’s acquisition of International Rectifier (IR) by Infineon will change the landscape of the power semiconductor market from 2015. IR edged out Infineon in the MOSFET market by 0.1%, but the two combined companies will hold more than a 27% share in 2014, well ahead of Fairchild Semiconductor which has a less than a 10% share.

“The acquisition will propel Infineon to more than a 20% share of the total power semiconductor market in 2014, well ahead of Mitsubishi Electric, with less than a 9% share,” explained Kristian Castellano, an analyst with The Information Network.

“Within the power semiconductor market, we think that the strongest growth will be recorded by IGBTs, for which we forecast average annual growth of 4.9%, from $3.1 billion in 2012, to $4.0 billion in 2017.  Breaking down the market by transistors and modules, we note that the IGBT sector in 2013 was $0.749 billion for IGBT transistors and $2.352 billion for modules.”

The Information Network sees insulated-gate bipolar transistor (IGBT) and power metal-oxide-semiconductor field-effect transistor (MOSFET) as the main growth drivers of the overall power semiconductor market. The strongest growth will be from IGBTs, although power MOSFETs had the largest market share in 2013 due to its fast switching speed, near-perfect gate impedance, fast switching speed, excellent stability, and a relatively low on-state resistance.

The Information Network projects 3.3% average annual growth of the MOSFET market, from $5.4 billion in 2012 to $6.3 billion in 2017.

Related articles and links:

www.theinformationnet.com

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