IDT partners EPC to integrate GaN and silicon technologies

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By eeNews Europe

“GaN offers exciting opportunities to develop higher-performance, differentiated products for our customers,” said Sailesh Chittipeddi, vice president, Global Operations and chief technology officer at IDT. “EPC’s leadership in GaN-based power management technology made them the obvious choice to team with, and I look forward to exploring how GaN-based products – with all their inherent benefits—may be brought to market in the not-so-distant future.”

The three areas in which the companies are collaborating:

Communications and computing infrastructure – GaN’s low capacitance and zero QRR coupled with the low inductance of its chip-scale package result in high efficiency at high frequency.  This increase in efficiency will combine with IDT’s precise commutation and system expertise to drive up power density and deliver significant competitive advantage to communications and computing infrastructures.

Wireless power – The highly resonant wireless power transfer standard of the Alliance for Wireless Power (A4WP) consortium protocol operates at 6.78 MHz, where the high speed, low-loss switching ability of GaN drives efficiency to the levels of wired solutions.  Combining the GaN expertise of EPC and precision solutions of IDT will deliver a highly efficient, cost competitive solution that will drive widespread adoption of wireless power.

Radio frequency (RF)
– The two companies will explore collaboration to create a portfolio of RF products for the communications infrastructure market.

“A growing number of innovative companies, such as IDT, are integrating proven GaN technology into their solutions as a way to move beyond the limitations of silicon,” said Alex Lidow, CEO and co-founder of EPC. “Our team looks forward to working alongside IDT engineers to bring the exceptional speed and efficiency of EPC’s GaN technology to IDT customers.”

Related articles and links:

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GaN: The dawn of a new era?

GaN Systems raises extra USD20m to fund growth plans

X-FAB partners Exagan to produce GaN-on-Silicon devices on 200-mm wafers


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