Highly integrated 600V power module cuts costs

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By Nick Flaherty

The flowIPM 1B CIP 600 V combines a high-speed F5 IGBT with the switching performance of a MOSFET and a silicon carbide boost diode in the PFC circuit optimized for frequencies up to 150 kHz.

The high-speed F5 IGBT, paired with the silicon carbide boost diode in the PFC circuit, not only delivers higher performance, it also drives down the cost of external passive components. The current rating of the CIP (converter + inverter + power factor correction) topology in the integrated power module is 10 A @ 80° C heat sink temperature.

The module enables manufacturers to cut their overall system’s size, cost, and time to market. It also features an inverter gate drive with a bootstrap circuit for high-side power supply, as well as emitter shunts (30 mΩ) for vastly improved motion control.

The modules come in 17 mm flow 1B housings. Versions in the 12 mm housing, with Press-fit pins and with phase-change material are available on request.

To learn more about Vincotech’s flowIPM 1B CIP, please visit:


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