GaN Systems and On Semiconductor have teamed up to design a 1MHz half bridge evaluation board using a GaN daughter board with a 650 V, 30 A GaN E-HEMT switch and a high speed gate driver board.
This half bridge evaluation board is developed for existing and new PCB designs and allows designers to easily evaluate GaN in existing half−bridge or full−bridge power supplies. The kit measures 25mm x 25mm layout, minimizing PCB board space. It uses On Semiconductor’s NCP51820 gate driver to provide a 200 V/ns CMTI rating for increased power density and improved performance with fast-switching GaN power transistors.
The half bridge evaluation board is aimed at applications such as AC-DC adapters, data centre power supplies, PV inverters, energy storage systems, and Bridgeless Totem Pole topologies.
“The expansion of the GaN components ecosystem including driver ICs such as our NCP51820 remove design barriers and take advantage of the numerous benefits that GaN E-HEMTs provide,” stated Ryan Zahn, Director of Marketing at On Semiconductor. “With rising interest and adoption of GaN, we look forward to continued collaboration with GaN Systems in supporting and meeting the new power requirements taking place across many industries.”
“The new evaluation board developed in collaboration with ON Semiconductor makes it easier and more cost effective to design with GaN – opening the door for smaller, lighter, and more efficient power converters,” said Charles Bailley, Senior Director, Worldwide Business Development at GaN Systems. “This collaboration signals the innovation not only happening with end products designed with GaN but in components, design tools, and reference designs that optimize the use of GaN.”