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GaN power transistor delivers high frequency switching for DC-DC power conversion

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By eeNews Europe

The EPC2018 is a 5.76 mm2, 150 VDS, 12 A device with a maximum RDS(on) of 25 milliohms with 5 V applied to the gate.  The GaN power transistor delivers high performance due to its ultra high switching frequency, low RDS(on), low QG and in a small package.

Compared to a state-of-the-art silicon power MOSFET with similar on-resistance, the EPC2018 is much smaller and has many times superior switching performance. Applications that benefit from eGaN FET performance include high-speed DC-DC power supplies, point-of-load converters, class D audio amplifiers, as well as many other circuits needing nanosecond switching speeds.

Availability and Pricing

In 1k piece quantities, the EPC2018 is priced at $6.54 and is immediately available through Digi-Key Corporation

More Information about the EPC2018 gallium nitride power transistors
https://epc-co.com/epc/Products/eGaNFETs/EPC2018.aspx


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