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GaN MMIC power amplifiers deliver up to 25 W

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By eeNews Europe

The HMC1086F10 is a 25 W GaN MMIC power amplifier which operates between 2 and 6 GHz, and is provided in a 10-lead flange mount package. The amplifier typically provides 23 dB of small signal gain, +44 dBm saturated output power, and delivers +46 dBm output IP3 at +33 dBm output power per tone. The amplifier draws 1100 mA quiescent current from a +28V DC supply. The HMC1086 is the die version of the HMC1086F10. This 25 W GaN MMIC power amplifier also operates between 2 and 6 GHz and provides 22 dB of small signal gain, +44 dBm of saturated output power, and +48 dBm output IP3 at +33 dBm output power per tone. Both amplifiers feature RF I/Os that are DC blocked and matched to 50 Ohms for ease of use.

The HMC1087F10 is an 8 W GaN MMIC power amplifier which operates between 2 and 20 GHz, and is provided in a 10-lead flange mount package. The amplifier typically provides 11 dB of small signal gain, +39 dBm of saturated output power, and +43 dBm output IP3 at +28 dBm output power per tone. The amplifier draws 850 mA quiescent current from a +28V DC supply. The HMC1087 is the die version of the HMC1087F10. This 8 W GaN MMIC power amplifier also operates between 2 and 20 GHz and provides 11 dB of small signal gain, +39 dBm of saturated output power, and +45 dBm output IP3 at +29 dBm output power per tone. Both amplifiers feature RF I/Os that are matched to 50 Ohms.

Both the HMC1086 and the HMC1087 amplifiers feature compact die sizes, high output power capability and simplified biasing, which make them ideal for integration into high power density Multi-Chip-Module (MCM) and subsystem applications.

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