GaN FET boost for rugged medical design

GaN FET boost for rugged medical design
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Nayuta Power Energy in Japan is using gallium ntride (GaN) power transistors to boost the performance of its medical systems. The LEMURIA ME3000 (above) uses 650V GaN FETs in the AC inverter to achieve 99% efficiency in a fanless system and is Japan’s first lithium-ion (Li-ion) battery power storage device…
By Nick Flaherty

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Nayuta Power Energy in Japan is using gallium ntride (GaN) power transistors to boost the performance of its medical systems.

The LEMURIA ME3000 (above) uses 650V GaN FETs in the AC inverter to achieve 99% efficiency in a fanless system and is Japan’s first lithium-ion (Li-ion) battery power storage device for medical equipment to earn S-JQA certification for electrical products.

Transphorm’s JEDEC-qualified TP65H035WS is a high performance 650V, 35 mohm GaN device in a thermally robust TO-247 package. It offers the industry’s highest reliability with a ±20V gate safety margin and a 4V noise immunity threshold. It can also yield greater than 99 percent power efficiency while reducing power system size, weight, and overall cost.
 
The LEMURIA ME3000 is a small, lightweight product that is easily portable in medical facilities as well as in the field. It has a continuous 1.5 kW output and a 3.3 kWh storage capacity with up to 33 hours of usability before needing to be recharged.

Moving to a GaN FET design increased the power efficiency from 96.24% to 99.01%, a 73% reduction in power loss operating at the same frequency. As a result, the fanless power supply can be hermetically sealed unit without ventilation holes, which prevents liquids and dust from contaminating or damaging the system.

“Medical environments call for solutions that offer extremely high reliability all while meeting rigid safety and sanitation protocols. A power supply running a respirator cannot fail. Nor can it expose patients to potential germs harbored in areas that cannot be easily cleaned—which is where a sealed, GaN-based unit offers incredible value,” said Morgan Yoshiyuki Habuta, Executive Director, Nayuta Power Energy Co. Ltd.

“The high switching capability and reliability offered by Transphorm’s GaN FETs enabled us to achieve our goals with respect to the LEMURIA ME3000. Incorporating the FETs into our advanced power system design delivered a Li-ion battery supply capable of supporting a wide range of high-power medical applications at any location. We’re expanding the reach of medical care, and Transphorm’s GaN is helping us do it.”

The portability and rugged design allows the LEMURIA ME3000 to be used in numerous environments including large hospitals (operating, diagnostic, and patient rooms); long-term care facilities; individuals’ homes; and disaster sites.

Transphorm’s TP65H035WS GaN FET can be used in AC-to-DC and DC-to-DC converters as well as DC-to-AC inverters. Target application markets include computing, crypto mining, data center, medical, and telecommunications. The devices are currently available through Digi-Key and Mouser.
 
nayuta.group; www.transphormusa.com

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