Gallium nitride power transistor delivers high frequency switching for DC-DC power conversion

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By eeNews Europe

The EPC2016 is a 3.36 mm2, 100 VDS, 11 A device with a maximum RDS(on) of 16 milliohms with 5 V applied to the gate.  The GaN power transistor delivers high performance due to its ultra high switching frequency, low RDS(on), low QG and in a small package.

Compared to a state-of-the-art silicon power MOSFET with similar on-resistance, the EPC2016 is much smaller and has many times superior switching performance. Applications that benefit from eGaN FET performance include high-speed DC-DC power supplies, point-of-load converters, class D audio amplifiers, and high frequency circuits.

Availability and Pricing

Additionally, the EPC9010 development board, featuring the EPC2016 devices and the LM5113 gate driver IC in a half bridge configuration, is available now. Development boards support designers in evaluating and incorporating eGaN FETs into their power conversion systems.
In 1k piece quantities, the EPC2016 is priced at $1.61 and is immediately available through Digi-Key Corporation.

More Information about the EPC2016 eGaN FETs at


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