Fast recovery superjunction MOSFETs for bridge and ZVS converters

New Products |
By Nick Flaherty

The MDmesh DM6 600V MOSFETs are aimed at applications and topologies that need a robust diode to handle dynamic voltage changes. The reduced reverse-recovery time (trr) minimises power dissipation in the diode when turning off after freewheeling and the recovery softness is optimised to enhance reliability. In addition, very low gate charge (Qg) and on-resistance (RDS(ON)) (see below), together with a capacitance profile tailored for light loads, allow higher operating frequencies and greater efficiency, with simplified thermal management and reduced EMI.

The parts are aimed at equipment such as charging stations for electric vehicles, telecom or data-centre power converters and solar inverters that need more robust performance and increased power density.

The MDmesh DM6 family has 23 part numbers covering current ratings from 15A to 72A, with gate charge (Qg) ranging from 20nC to 117nC and RDS(ON) from 0.240Ω down to 0.036Ω respectively. Package options include the new low-inductance leadless TO-LL, PowerFLAT 8×8 HV, D2PAK, TO-220, and TO-247 with short leads, long leads, or Kelvin pin for applications requiring precision current sensing.

The MDmesh DM6 family is in production now.

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