EPC cuts 100 V GaN FET on resistance to 1.7 mΩ

EPC cuts 100 V GaN FET on resistance to 1.7 mΩ
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Efficient Power Conversion has launched a 100V gallium nitride enhancement-mode FET with the world’s lowest on-resistance of 1.7 mΩ typical (2.2 mΩ  max). The EPC2071 is aimed at high power density applications such as 48 V – 54 V input DC-DC for servers and artificial intelligence (AI) accelerators. The EPC2071 is…
By Nick Flaherty

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Efficient Power Conversion has launched a 100V gallium nitride enhancement-mode FET with the world’s lowest on-resistance of 1.7 mΩ typical (2.2 mΩ  max).

The EPC2071 is aimed at high power density applications such as 48 V – 54 V input DC-DC for servers and artificial intelligence (AI) accelerators. The EPC2071 is also suitable for BLDC motor drives, including e-bikes, e-scooter, robots, drones, and power tools.

With a 10.2 mm2 footprint the EPC2071 is a third the size of a silicon MOSFET with the same RDS(on), the QG is 25% that of the MOSFET, and the deadtime can be reduced from 500 ns to 20 ns to optimize motor plus inverter efficiency and reduce acoustic noise.

The EPC2071 is footprint compatible to EPC’s prior Generation 4 family of products: EPC2021, EPC2022, EPC2206. The Generation 5 improvement gives the EPC2071 the same on-resistance as the prior generation with 26% smaller size.

“The EPC2071 makes the ideal switch for the primary side of the LLC DC-DC converter from 40 V – 60 V to 12 V- 5V. This 100-volt device offers improved performance and cost compared with previous-generation 100 V GaN FETs allowing designers to economically improve efficiency and power density”, according to Alex Lidow, EPC’s co-founder and CEO. “These parts are also suitable for telecom and server power supplies, and solar applications. Additionally, EPC2071 is less expensive than comparable silicon devices and in stock!”

The FT is used in the EPC9174 reference design board for a 1.2 kW, 48 V input to 12 V output LLC converter as the primary side full bridge. The EPC2071 enables 1 MHz switching frequency and 1.2 kW of power in a 22.9 mm x 58.4 mm x 10 mm footprint, giving a power density 1472 W/in3. The peak efficiency is 97.3% at 550W and the full load efficiency of 96.3% at 12 V delivering 100 A output.

Designers interested in replacing their silicon MOSFETs with a GaN solution can use the EPC GaN Power Bench’s cross reference tool to find a suggested replacement based on their unique operating conditions.  The cross reference tool can be found at epc-co.com/epc/DesignSupport/GaNPowerBench/CrossReferenceSearch.aspx

The EPC2071 eGaN FET is priced at 1K u/reel at $3.81 each and the EPC9174 development board is priced at $498.00/each.

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