The TK1R5R04PB is rated for 40V and 160A and has a maximum on resistance of 1.5 mΩ (VGS = 10V). Minimum and maximum voltage threshold ratings (Vth) are 2V and 3V respectively. Toshiba’s UMOS IX-H wafer process has been used to produce the TK1R5R04PB. U-MOS IX-H has an excellent switching ripple suppression capability and can contribute to EMI noise reduction in applications. Target applications for the new device include automotive pumps, fans, DC-DC converters and load switches; the TK1R5R04PB will conform with AEC-Q101 automotive level qualification requirements.
Toshiba Electronics Europe; www.toshiba.semicon-storage.com