Breakthrough brings GaN advantages to silicon power MOSFETs
Specialist foundry SkyWater Technology and Applied Novel Devices in the US have developed a new type of silicon power MOSFET with significant benefits for fast switching power conversion applications.
AND says its channel engineering enables half the output charge of silicon with near-zero reverse-recovery and ultra-low Qoss as well as a specific on-resistance of under 5 mOhm-mm2 @ 30V BVDSS)with a gate drive as low as 2.5V
These characteristics can substantially reduce parasitic losses incurred in power management systems and improve conversion efficiency in numerous applications including data centres, automotive, electric motor drives, microinverters for renewable energy systems and many others in industrial and consumer markets.
In applications such as DC-DC converters, the near-zero reverse recovery and low output capacitances eliminate the need for integrated or standalone Schottky clamp diodes. This makes the devices attractive for higher frequency voltage conversion applications typically supported by gallium nitride (GaN) FETs. The high frequencies enabled by these power MOSFETs, in turn, drive reduction of passive component sizes to achieve small form factor power modules that support further system level efficiency gains.
AND will offer wafer scale and standard package products ranging from 15-80V for industrial and consumer applications. AND plans to expand the offering up to 1200V for electric vehicle, renewable energy and various industrial applications in wafer-scale and QFN packaging.
Through a technology licensing agreement, SkyWater will offer this power MOSFET technology process flow to foundry customers.
“AND has developed a unique technology that brings the benefits of GaN-like performance to mainstream Si MOSFETs,” said Leo Mathew, CEO and co-founder of AND. “SkyWater is an ideal partner to bring this industry breakthrough to realization in an IP-secure development and production environment.”
“During this global semiconductor shortage, we are excited to work with AND here in the US to enable a new technology for power management applications which are used in all types of electronic devices,” said Steve Kosier, SkyWater chief technology officer. “This new class of Si power MOSFETs enhances efficiency and cuts power losses for fast power switching applications. We are pleased to have created a standard process flow for this highly differentiated technology that can be offered to all foundry customers on a wide-scale.”
AND is currently sampling the new power MOSFETs and in the process of ramping production at SkyWater. The devices in wafer scale packages will be tailored to specific form factors for existing boards and systems. The products are available from AND and the technology is available immediately as a foundry offering directly from SkyWater.
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