Despite its acqusition of Linear Technologies two years ago, Analog Devices has been notably quiet about its plans for widebandgap semiconductors suchas silicon carbide (SiC) and gallium nitride (GaN). It is still quiet, not disclosing the terms of the strategic investment and long-term supply agreement with United SiC, despite having worked with the company all the time it has been integrating the Linear business.
“From our first meeting with the ADI Power team, they instantly understood the value of our SiC technology and the ease with which the devices could be scaled and used in their power platforms. This is a terrific time to bring such a high calibre leader like ADI on as a shareholder,” said Chris Dries, President and CEO at UnitedSiC, which uses a co-packaged approach of combining silicon MOSFETs with SiC diodes as a drop-in replacement for existing silicon devices.
UnitedSiC and ADI have been collaborating on SiC-based products and devices for more than two years, and ADI epxects the inclusion of these devices to further strengthen its analogue power range.
“For the last few years, we have been actively following the development and progress of silicon carbide technology and devices. We found UnitedSiC’s FET technology to be ideally suited for ADI’s high performance power platforms and our pursuit of additional high voltage applications,” said Steve Pietkiewicz, Senior VP of Power Products at ADI.
- PRACTICAL CONSIDERATIONS WHEN COMPARING SIC AND GAN IN POWER APPLICATIONS
- 4PIN KELVIN PACKAGE BOOSTS SIC FET PERFORMANCE
- SILICON CARBIDE FET SERIES BOOSTS SPEEDS AND EFFICIENCY
- THIRD GENERATION SIC JFET ADDS 1200 V AND 650 V OPTIONS
- 1200V SIC FETS PROVIDE DROP IN UPGRADE FOR MOSFETS
- 650V SILICON CARBIDE FETS ARE DROP-IN SILICON SUBSTITUTES TO CUT POWER LOSSES