650V MOSFET adds platinum layer for performance boost
STMicroelectronics has launched two families of n-channel superjunction power MOSFET with multiple drains for switched-mode power supplies (SMPS). These 600V and 50V devices are particularly aimed at SMPS supplies for data-centre servers and 5G infrastructure to flat-panel televisions.
The first M9 and DM9 MDmesh devices are the 650V STP65N045M9 and the 600V STP60N043DM9. Both have very low on-resistance (RDS(on)) per unit area, which maximizes power density and permits compact system dimensions. Each has the best maximum RDS(on) (RDS(on)max) in its category, at 45mΩ for the STP65N045M9 and 43mΩ for the STP60N043DM9. With very low gate charge (Qg), typically 80nC at 400V drain voltage, these devices have the best RDS(on)max x Qg figure of merit (FoM) currently available.
- ST takes super-junction power MOSFETs to 1500V rating
- 650V rated power MOSFETs boast lowest on-state resistance
- MOSFETs with fast recovery diodes boost converter power
The high-voltage MDmesh technologies add a platinum diffusion process that ensures a fast intrinsic body diode, giving a peak diode-recovery slope (dv/dt) is greater than for earlier processes. All devices belonging to MDmesh DM9 can withstand dv/dt up to 120V/ns at 400V.
The gate threshold voltage (VGS(th)), typically 3.7V for the STP65N045M9 and 4.0V for STP60N043DM9, minimizes both turn-on and turn-off switching losses compared with the earlier MDmesh M5 and M6/DM6. The MDmesh M9 and DM9 series also feature a very low reverse recovery charge (Qrr) and reverse recovery time (trr), which further contribute to improved efficiency and switching performance.
The two devices are available now in a TO-220 power package from ST and in distribution by the end of Q2 2022. The STP65N045M9 will be priced from $6.30 for orders of 1000 pieces. Further standard surface-mount and through-hole packages options will be added later in 2022.
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