500-W GaN on SiC HEMT pulsed power transistor provides high gain, efficiency over 1.2-1.4-GHz bandwidth

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By eeNews Europe

The MAGX-001214-500L00 is a gold-metalized pre-matched GaN on Silicon Carbide transistor optimized for pulsed L-Band radar applications. The MAGX-001214-500L00 provides 500W of output power with 19 dB of gain and 55% efficiency.  The device also claims high breakdown voltages, which allows for operation at 50 V under more extreme load mismatch conditions.

The device is assembled using state of the art design and packaging assembly, which enables the customer to reach higher gain and efficiency for today’s demanding applications.

Operating between the 1200 MHz – 1400 MHz Frequency range, the MAGX-001214-500L00 is a highly robust transistor, boasting a mean time to failure (MTTF) of 5.3 106hours, and is available as both flanged and flangeless packaged devices.

Samples of MAGX-001214-500L00 are available from stock.

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