45W and 150W MasterGaN devices for power conversion

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By Nick Flaherty

STMicroelectronics has released integrated GaN power packages for applications up to 45W and 150W.

ST’s MasterGaN concept simplifies migrating from ordinary silicon MOSFETs to GaN wide-bandgap power technology. The devices integrate two 650V power transistors with optimized high-voltage gate drivers and associated safety and protection circuitry, eliminating gate-driver and circuit-layout design challenges. Combined with the higher switching frequencies possible with GaN transistors, these integrated devices enable power supplies that are up to 80% smaller than silicon-based designs as well as extremely robust and reliable.

The MasterGaN3 is aimed at 45W designs while the MasterGaN5 targets 150W switched-mode power supplies, chargers, adapters, high-voltage Power-Factor Correction (PFC), and DC-DC converters. These join the MasterGaN1, MasterGaN2, and MasterGaN4, which target applications from 65W to 400W.

The GaN power transistors of MasterGaN3 devices have asymmetrical on-resistance (Rds(on)) of 225mΩ and 450mΩ, making these devices suited to soft-switching and active-rectification converters. In MasterGaN5 both transistors have 450mΩ Rds(on) for use in topologies such as LLC-resonant and Active Clamp Flyback.

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All the MasterGaN family members have inputs compatible with logic signals from 3.3V to 15V, which simplifies connection of a host DSP, FPGA, or microcontroller, and external devices such as Hall sensors. They also integrate protection including low-side and high-side undervoltage lockout (UVLO), gate-driver interlocks, over-temperature protection, and a shutdown pin.

Each MasterGaN device is supported with a dedicated prototype board to help designers jump-start new power-supply projects. The EVALMASTERGAN3 and EVALMASTERGAN5 boards contain circuitry to generate single-ended or complementary driving signals. There is an adjustable dead-time generator, as well as connections for the user to apply a separate input signal or PWM signal, add an external bootstrap diode to help with capacitive loads, and insert a low-side shunt resistor for peak-current-mode topologies.

The devices are housed in a 9mm x 9mm GQFN package optimized for high-voltage applications with 2mm creepage distance between high-voltage and low-voltage pads.

The MasterGaN3 and MasterGaN5 are in production now, priced from $6.08 for MasterGaN3 and $5.77 for MasterGaN5, for orders of 1000 pieces.

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