2kV SiC MOSFET in TO-247 package boosts 1500V DC link designs

2kV SiC MOSFET in TO-247 package boosts 1500V DC link designs
Technology News |
Infineon Technologies has launched a hybrid silicon carbide (SiC) MOSFET with a blocking voltage of 2KV in a new package for single level 1500V DC link designs 1500 V DC based systems pose a challenges on the system design such as fast switching at high DC voltage, which typically requires a multi-level…
By Nick Flaherty

Share:

Infineon Technologies has launched a hybrid silicon carbide (SiC) MOSFET with a blocking voltage of 2KV in a new package for single level 1500V DC link designs

1500 V DC based systems pose a challenges on the system design such as fast switching at high DC voltage, which typically requires a multi-level topology. This leads to a complicated design and a relatively high number of components.

The latest CoolSiC devices are built on the M1H SiC process and combine a 2 kV MOSFET with a 2kV SiC diode. This provides a significantly larger gate voltage window that improves the on-resistance for a given die size for applications up to 1500 V DC such as photovoltaic inverters and EV charging.

The larger gate voltage window also provides a high robustness against driver- and layout-related voltage peaks at the gate, without any restrictions even at high switching frequencies.

The devices, launched the PCIM show this week, are initially packaged in a module but Infineon has developed a new discrete TO-247 HC high voltage package that will be available by the end of 2022. This will use the low ohmic .XT diffusion soldering technology that provides a 15% improvement in thermal conductivity, 25% reduction on junction-to-case thermal resistance (Rthjc)  and 45% reduction in junction-to-case thermal impedance (Zthjc) over the previous generation devices.

The M1H process technology enables sufficient overvoltage margin and offers ten times lower FIT rate caused by cosmic rays compared to 1700 V SiC MOSFETs. Furthermore, the extended gate voltage operating range makes the devices easy to use.

Infineon says the 2 kV CoolSiC technology offers a low drain-source on resistance (R DS(on)), which will be determined by the packaging in a module or the TO-247. The RDS(on) for the EasyPack 3B module is 19mΩ per channel. The rugged body diode is also suitable for hard switching.

Samples of the 2 kV CoolSiC MOSFETs are available now in EasyPack 3B and 62mm modules, and later in a new high-voltage discrete TO247-PLUS package. Infineon also has a 2.3 kV isolation-capable EiceDRIVER.

The start of production of the Easy 3B (DF4-19MR20W3M1HF_B11), a power module with 4 boost circuits that acts as the MPPT stage of a 1500 V PV string inverter, is planned for Q3 2022, with the 62mm module in half-bridge configuration (3, 4, 6 mΩ) to follow in Q4 2022.

www.infineon.com/CoolSiC.

Related articles

Other articles on eeNews Power

 

Linked Articles
eeNews Power
10s