The Ultra-Junction X3-Class HiPerFET Power MOSFETs have an on-resistance and gate charge as low as 4.5 milliohms and 21 nanocoulombs for higher power densities and energy efficiencies in a wide variety of high-speed power conversion applications.
The devices use a charge compensation principle and proprietary process technology to achieve a best-in-class Figure of Merit (on-resistance times gate charge) which translates into lowest conduction and switching losses. They exhibit the lowest on-state resistances in the industry at 5 milliohms in the TO-264 package and 4.5 milliohms in the SOT-227.
The fast intrinsic body diodes (HiPerFETs) of the MOSFETs display very soft recovery characteristics, minimizing voltage overshoots and electromagnetic interference (EMI), especially in half or full-bridge topologies. With low reverse recovery charge and time, the diodes are capable of removing all the leftover energies during high-speed switching to avoid device failure and achieve high efficiency.
The devices are also avalanche capable and exhibit a superior dv/dt performance. They are robust against device failure caused by voltage spikes and accidental turn-on of parasitic bipolar transistors inherent in the MOSFET structure. As such, these rugged devices require fewer snubbers and can be used in both hard and soft switching power converters.
This makes them suited to applications such as battery chargers for light electric vehicles (LEVs), synchronous rectification in switching power supplies, motor control, DC-DC converters, uninterruptible power supplies, electric forklifts, Class-D audio amplifiers, and telecom systems.
The new 250V X3-Class Power MOSFETs with HiPerFET body diodes are available in TO-3P, TO-220 (overmolded or standard), TO-247, PLUS247, TO-252, TO-263, TO-264, TO-268HV and SOT-227 package. Some example part numbers include IXFA60N25X3, IXFP80N25X3, IXFT170N25X3HV and IXFK240N25X3, with current ratings of 60A, 80A, 170A, and 240A, respectively.